Shenzhen Hengstar Technology Co., Ltd.

Shenzhen Hengstar Technology Co., Ltd.

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Shenzhen Hengstar Technology Co., Ltd.
HomeFaʻatauAlamanuia Smarma Module MeafaigaluegaDDR3 UDIMM Manatua Faʻaliga Faʻapitoa Faʻamatalaga

DDR3 UDIMM Manatua Faʻaliga Faʻapitoa Faʻamatalaga

Totogi totogi:
L/C,T/T,D/A
Incoterm:
FOB,EXW,CIF
Min. Poloaiga:
1 Piece/Pieces
Felauaiga:
Ocean,Air,Express,Land
  • Faamatalaga o oloa
Overview
Oloa Uiga

Faataʻitaʻiga No.NSO4GU3AB

Sapalai Gafatia & Faʻamatalaga Faʻaopo...

FelauaigaOcean,Air,Express,Land

Totogi totogiL/C,T/T,D/A

IncotermFOB,EXW,CIF

Afifiina & Faaooina
Faʻatau Iunite:
Piece/Pieces

4GB 1600MHZ 240-PIN DDR3 UDIMM


Faafoliga Talafaasolopito

Revision No.

History

Draft Date

Remark

1.0

Initial Release

Apr. 2022

 

Okaina o faamatalaga

Model

Density

Speed

Organization

Component Composition

NS04GU3AB

4GB

1600MHz

512Mx64bit

DDR3 256Mx8 *16


Faʻamatalaga
Hengstar Upbufred DDR3 SDRAM MONMSS (Unbufffered Daice Dism Cynchronous Deam Double Sweet Modules. NS04GI3AB o le 512m X 64-bit e lua tulaga 46b Ddr3-1600 CL11 1.5V sdred damm oloa, faavae i luga o le sefulu ma le ono 46m x 8-bit fbga. O le SPD o loʻo faagaoioia i Jedc Stande Lavency DDR3-1600 taimi o le 11-15-11 i le 1.5V. O le 240-PIN PRDM e faʻaaogaina le auro fefiloi tamatamailima. O le SDROC e le tatalaina le Dimem o loʻo fuafuaina mo le faʻaaogaina o le faʻamanatuina o le manatua pe a faʻapipiʻi i faiga e pei o polokalama pei o fale ma fale faigaluega.


Foliga
powe sapalaiina: VDD = 1.5V (1.425V i le 1.575v)
vDDQ = 1.5v (1.425v i le 1.575v)
800mhz fck mo 1600MB / sekone / pine
8 tutoatasi i totonu o le Faletupe
'ppitepleespuruty Capilly: 11, 10, 9, 8, 8, 6
iclampmalfuble faʻaopopo laʻasaga: 0, CL - 2, poʻo le CL - 1 Uati
8-bit muamua-falai
bous le umi: 8 (interleave e aunoa ma se tapulaʻa, lava ma le amataina o le tuatusi "000" e le faʻatagaina le toe faitau o le A12 poʻo le TRS]
BI-itu-faʻatonuga faʻamatalaga o le strobe
irnang (oe lava) coubration; Lotoifale Lava Candibration e ala i le ZQ PIN (RZQ: 240 Oim ± 1%)
na died faʻamuta le faʻaaogaina o le ODT PIN
average faʻaleleia le taimi 7.8us i lalo ifo o le vaega 85 ° C, 3.9s i le 85 ° C <95 ° C
Gisychronous toe setiina
ad ated faʻamatalaga-itput drive malosi
 "e ala i le topogi
PCB: Maualuga 1.18 "(30mm)
rohs tausisia ma halosen-leai


Key Time Completers

MT/s

tRCD(ns)

tRP(ns)

tRC(ns)

CL-tRCD-tRP

DDR3-1600

13.125

13.125

48.125

2011/11/11


Tuatusi laulau

Configuration

Refresh count

Row address

Device bank address

Device configuration

Column Address

Module rank address

4GB

8K

32K A[14:0]

8 BA[2:0]

2Gb (256 Meg x 8)

1K A[9:0]

2 S#[1:0]


Faapipii faamatalaga

Symbol

Type

Description

Ax

Input

Address inputs: Provide the row address  for ACTIVE commands, and the column
address and auto precharge bit (A10) for READ/WRITE commands, to select one location
out of the memory array in the respective bank. A10 sampled during a PRECHARGE
command determines whether the PRECHARGE applies to one bank (A10 LOW, bank
selected by BAx) or all banks (A10 HIGH). The address inputs also provide the op-code
during a LOAD MODE command. See the Pin Assignments table for density-specific
addressing information.

BAx

Input

Bank address inputs: Define the device bank to which an ACTIVE, READ, WRITE, or
PRECHARGE command is being applied. BA define which mode register (MR0, MR1,
MR2, or MR3) is loaded during the LOAD MODE command.

CKx,
CKx#

Input

Clock: Differential clock inputs. All control, command, and address input signals are
sampled on the crossing of the positive edge of CK and the negative edge of CK#.

CKEx

Input

Clock enable: Enables (registered HIGH) and disables (registered LOW) internal circuitry
and clocks on the DRAM.

DMx

Input

Data mask (x8 devices only): DM is an input mask signal for write data. Input data is
masked when DM is sampled HIGH, along with that input data, during a write access.
Although DM pins are input-only, DM loading is designed to match that of the DQ and DQS pins.

ODTx

Input

On-die  termination:  Enables  (registered  HIGH)  and  disables  (registered  LOW)
termination resistance internal to the DDR3 SDRAM. When enabled in normal operation,
ODT is only applied to the following pins: DQ, DQS, DQS#, DM, and CB. The ODT input will be ignored if disabled via the LOAD MODE command.

Par_In

Input

Parity input: Parity bit for Ax, RAS#, CAS#, and WE#.

RAS#,
CAS#,
WE#

Input

Command inputs: RAS#, CAS#, and WE# (along with S#) define the command being
entered.

RESET#

Input
(LVCMOS)

Reset: RESET# is an active LOW asychronous input that is connected to each DRAM and
the registering clock driver. After RESET# goes HIGH, the DRAM must be reinitialized as
though a normal power-up was executed.

Sx#

Input

Chip select: Enables (registered LOW) and disables (registered HIGH) the command
decoder.

SAx

Input

Serial address inputs: Used to configure the temperature sensor/SPD EEPROM address
range on the I2C bus.

SCL

Input

Serial
communication to and from the temperature sensor/SPD EEPROM on the I2C bus.

CBx

I/O

Check bits: Used for system error detection and correction.

DQx

I/O

Data input/output: Bidirectional data bus.

DQSx,
DQSx#

I/O

Data strobe: Differential data strobes. Output with read data; edge-aligned with read data;
input with write data; center-alig

SDA

I/O

Serial
sensor/SPD EEPROM on the I2C bus.

TDQSx,
TDQSx#

Output

Redundant data strobe (x8 devices only): TDQS is enabled/disabled via the LOAD
MODE command to the extended mode register (EMR). When TDQS is enabled, DM is
disabled and TDQS and TDQS# provide termination resistance; otherwise, TDQS# are no
function.

Err_Out#

Output (open
drain)

Parity error output: Parity error found on the command and address bus.

EVENT#

Output (open
drain)

Temperature event: The EVENT# pin is asserted by the temperature sensor when critical
temperature thresholds have been exceeded.

VDD

Supply

Power supply: 1.35V (1.283–1.45V) backward-compatible to 1.5V (1.425–1.575V). The
component VDD and VDDQ are connected to the module VDD.

VDDSPD

Supply

Temperature sensor/SPD EEPROM power supply: 3.0–3.6V.

VREFCA

Supply

Reference voltage: Control, command, and address VDD/2.

VREFDQ

Supply

Reference voltage: DQ, DM VDD/2.

VSS

Supply

Ground.

VTT

Supply

Termination voltage: Used for control, command, and address VDD/2.

NC

No connect: These pins are not connected on the module.

NF

No function: These pins are connected within the module, but provide no functionality.

FAAMATALAGA : O LE PING FAʻAMATALAGA FAʻAALIGA LUGA O SE UIGA O SE UIGA O LE FAʻAPITOA UMA FOʻI MO UMA DDR3 MODE. O pine uma na lisiina Me aua le lagolagoina i luga o lenei vaega. Vaʻai PIN faʻatulagaina tofiga mo faʻamatalaga faʻapitoa i lenei vaega.


Polokalama poloka poloka

4GB, 512mx64 module (2rank o x8)

1


2


Manatua:
1. O le ZQ polo i luga o le vaega o le DDR3 o loʻo fesoʻotaʻi i fafo atu o le 240ω ± 1% o le teteʻe e nonoa i le eleele. O loʻo faʻaaogaina mo le kalibrasi o le vaega o loʻo i ai i luga o le taimi o le taimi e faʻamuta ai ma le avetaʻavale.



Module Fua


Manatu i luma

3

Manatu i luma

4

Faamatalaga:
1.Mill i luga o le milimita (inisi); Max / min pe masani (fiafia) o lea na matauina.
2.Faʻatasiga i luga o itu uma ± 0.15mmte seʻi vagana ai gaioiga faʻapitoa.
3. O le maimoa maimoaina o loʻo faʻasino atu naʻo.

Vaega Faʻatino : Alamanuia Smarma Module Meafaigaluega

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    Mr. Jummary
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